INFLUENCES OF THE TEMPERATURE AND THE PHONONS EFFECT ON THE PROPERTIES OF THE STRONG-COUPLING EXCITON IN A QUANTUM WELL

Abstract

The influences of the temperature and the phonons effect on the properties of the exciton, which is strongly coupled with interface optical (IO) phonons and weakly coupled with bulk longitudinal-optical (LO) phonons, in a quantum well are studied by means of Huybrechts' linear-combination operator and the Lee–Low–Pines variational method. The expressions for the induced potential of the ground state, the energy shift of the ground state, and the first internal excited state of the exciton were derived. Numerical results are illustrated for AgBr / AgCl quantum well. The results indicate that the induced potential of the ground state, the energy shift of the ground state, and the energy shift of the first internal excited state of the exciton produced by the exciton strongly coupling with IO phonons increase with increasing temperature; however, the induced potential of the ground state, the energy shift of ground state, and the energy shift of the first internal excited state of the exciton produced by the exciton weakly coupling with bulk LO phonons decrease with increasing temperature. The influence of temperature is greater to the changes of the induced potential and the energy shift of the exciton with well widths and the distances between electron and hole.