Abstract

AbstractPhoton energies emitted from donor–acceptor pairs (DAP) in semiconductors in an electric field are calculated using a variational procedure. The linear combinations of s‐ and p‐type hydrogen‐like functions are used as trial wave functions of the pair. The magnitude of the Stark shift of the DAP ground state energy as a function R (the distance between the donor and acceptor) and θ (the angle between R and electric field direction E) are obtained for different values of E and m/m (m electron effective mass, m the same for a hole). It is shown that at small values of R and cos θ < 0 (R < aB, aB Bohr radius) the Stark shift is positive due to the strong polarization of the electron and hole clouds in the electric field.

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