Influences of the mesa-sidewall effect on Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic transistors

Abstract

The influences of the mesa-sidewall effect on dc and RF performances of Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic high electron mobility transistors are studied and demonstrated. The leakage current path and parasitic capacitance induced from mesa-sidewalls seriously affect the device characteristics, including the excessive gate leakage current, the reduced breakdown voltage, the degraded RF current gain frequency and the increased sidegating effect.