Abstract
The growth of CuInSe2 film in the presence of an Sb beam results in a great improvement in surface morphology and grain structure. It is attributed to the surfactant modified growth caused by the Sb atoms. A p-type CuInSe2 film with a resistivity of about 0.05 Ω- cm was obtained, which is comparable with the resistivity of a Cu-rich film grown without Sb. Photoluminescence measurements also show that the luminescence intensity of the films grown with Sb is much higher than that of the films grown without Sb having similar compositions. It is probably due to the improvement in the grain structure as well as the crystallinity within the grains.
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