Abstract
The growth of 111-oriented CVD diamond film under a two-step model was simulated at atomic scale by using revised KMC method. The simulation was conducted at various substrate temperatures (1100 K-1400 K) and CH3 radical concentration (0.01 that: (1) The 111-oriented CVD diamond film growth under the two-step model is superior to that under corresponding single-step model, which is in good agreement with the experimental results. (2) Substrate temperature (Ts) and the concentration of CH3 ([CH3]) can produce important effects on the film deposition rate, surface roughness and the concentration of atom H embedded in the film. However, both the Ts and [H] should be controlled to a proper range for high quality films.
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