Simulation of CVD Diamond Film Growth by Method of Revised KMC

Abstract

The growth of CVD diamond film was simulated by using revised KMC method. The simulation was conducted at CH3 radical concentration (0.01%-0.03%) and atomic hydrogen concentration (0.01%-0.5%). The results showed that: The CVD diamond film growth under revised KMC method is superior, which is in good agreement with the experimental results. The concentration of CH3 ([CH3]) and the concentration of atomic H ([H]) can produce important effects on the film deposition rate, surface roughness and the concentration of atom H embedded in the film.