Abstract
The growth of CVD diamond film was simulated by using revised KMC method. The simulation was conducted at CH3 radical concentration (0.01%-0.03%) and atomic hydrogen concentration (0.01%-0.5%). The results showed that: The CVD diamond film growth under revised KMC method is superior, which is in good agreement with the experimental results. The concentration of CH3 ([CH3]) and the concentration of atomic H ([H]) can produce important effects on the film deposition rate, surface roughness and the concentration of atom H embedded in the film.
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