Influences of annealing and defect limitation on p-type silicon solar cell

Abstract

In this paper, we identify the influences of different annealing conditions on the p-type Cz silicon wafer surfaces and solar cells. X-ray photoelectron spectroscopy (XPS) has been applied to surfaces of silicon wafers for evaluating the composition. In order to identify the properties of the defect, minority carrier lifetime measurement was performed. Annealing condition effected the silicon surface oxidation and the defect of silicon. The best cell efficiency of 20.07 % with an open circuit voltage (Voc) of 648 mV was achieved by annealed at an oxygen atmosphere.