Abstract
The influence of Y 2 O 3 addition on electrical properties of β-SiC ceramics has been investigated. Polycrystalline SiC samples obtained by hot-pressing SiC–Y 2 O 3 powder mixtures in nitrogen (N) atmosphere contain Y 2 O 3 clusters segregated between SiC grains. Y 2 O 3 forms a Y–Si-oxycarbonitride phase during sintering by reacting with SiO 2 and SiC and by dissolution of N from the atmosphere; this induces N doping into the SiC grains during the process of grain growth. The SiC samples exhibit an electrical resistivity of ∼10 −3 Ω cm and a carrier density of ∼10 20 cm −3 , which are ascribed to donor states derived from N impurities. The increase in defect density with increasing Y 2 O 3 content is likely to be a main limiting factor of the electrical conductivity of SiC ceramics.
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