Abstract
ABSTRACTThe influences of Y and Mn alternately doped order on the microstructures and dielectric properties of the Ba0.6Sr0.4TiO3 (BST) films were reported in this paper. The Y and Mn alternately doped BST films were designed as YBST/MnBST/… and MnBST/YBST…multilayer films orderly expressed as (Y/Mn)M and (Mn/Y)M for short, and prepared on Pt/Ti/SiO2/Si wafers by an improved sol-gel method, where Y and Mn represent yttrium doped BST layer and manganese doped BST layer, and M is cycle unit, respectively. The microstructures of the alternately doped BST films were observed by SEM and the capacitance-voltage curves at 100 kHz or 1 MHz were measured by a HP4284A LCR meter and the dielectric properties in the range of 1GHz were measured by an E4991A impedance analyzer. Compared to Y or Mn doped multilayer BST film, (Y/Mn)M and (Mn/Y)M show higher dielectric tunability and lower dielectric loss with higher dielectric constant. Moreover, (Y/Mn)M show better dielectric properties than (Mn/Y)M because (Y/Mn)M show granular microstructures independent of M, while the (Mn/Y)M show granular microstructures when M is 2 and add to a surface layer of columnar microstructures on the granular microstructures when M is 4. The related mechanisms were obtained in terms of the XRD phase structures, the cross-sectional SEM microstructures and the AFM morphologies.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call