Abstract
AbstractThe influence of the thickness of silicon solar cells has been investigated using neighbouring multicrystalline silicon wafers with thickness ranging from 150 to 325 μm. For silicon solar cell structures with a high minority‐carrier diffusion length one expects that Jscwould decrease as the wafer becomes thinner due to a shorter optical path length. It was found experimentally that Jscis nearly independent of the thickness of the solar cell, even when the minority‐carrier diffusion length is about 300 μm. This indicates that the Al rear metallisation acts as a good back surface reflector. A decrease in Jscis observed only if the wafer thickness becomes less than about 200 μm. The observed trend in Vocas a function of the wafer thickness has been explained with PC1D modelling by a minority‐carrier diffusion length in the Al‐oped BSF which is small in relation to the thickness of the BSF. This effectively increases the recombination velocity at the rear of the cell. We have shown that the efficiency of solar cells made with standard industrial processing is hardly reduced by reducing the wafer thickness. Solar cell efficiencies might be increased by better rear surface passivation. Copyright © 2002 John Wiley & Sons, Ltd.
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