Abstract
The authors numerically investigated the consequence of vertical coupling among multi-stack InAs quantum dash (Qdash) laser structure on the lasing bandwidth. The developed model is based on multi-population carrier-photon rate equation and incorporates inhomogeneous broadening due to dash size or composition fluctuation, homogeneous broadening of optical gain, and the multi-longitudinal photon modes. In addition, the effect of Qdash layers emitting at different wavelength, and the carrier coupling (tunneling) between adjacent stacks, are also accounted for. The results predict a direct relation between the lasing bandwidth and the barrier thickness and hence enhanced lasing bandwidth could be achieved by decoupling the Qdash layers (large barrier thickness). Moreover, the model further affirms the non-equilibrium distribution of carriers among Qdash layers in a multi-stack laser structure.
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