Abstract
Two- and three-dimensional light intensity distributions from nano-resistor based solid-state incandescent light emitting devices, made of MOS capacitors with a high-k gate dielectric deposited on the p-type Si substrate, has been simulated using physics-based analytical calculations. The inter-nano-resistor distance affected the resolvability of individual nano-resistor light sources. Formation of clusters of nano-resistors and the presence of few large-sized nano-resistors resulted in bright radiation spots observed at higher magnifications. Light from individual nano-resistors could not be resolved at lower magnifications. The device’s center region was brightest, with light intensity diminishing uniformly in the radially outwards direction.
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