Abstract
This study focused on the properties of optics and electrics as well as microstructure and morphology of the ZAO thin films which were annealed at different temperature. After vacuum-annealed at 160° or above, the films' quality can be significantly improved. The growth along (002) direction of ZAO thin films were found to be faster than the ZAO films which were not treated and reached a maximum at 330°. FWHM decreased to 0.74°at 330° and grain size grew to 12.02039nm at 400°. The shape of crystal grain changed from anomalous formation to roundness. At the same time, the resistivity of ZAO thin films decreased and reached a minimum of 9.36×10-4Ω•cm while the average transmittance increased to 82% in visible region.
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