Abstract
The ZAO (ZnO:Al) thin films were prepared by DC reactive magnetron sputtering technique. The relationship between the process parameters and the organizational structure, optical and electrical properties was studied. Through optimizing the process parameters, an optimal preparation parameter can be obtained. Using the optimal parameters to prepare the ZAO thin films, the resistivity of the ZAO film is as low as 4.5×10−4 Ω·cm and the average transmissivity in the visible region is around 80%, the optical and electrical properties meet the application requirements.
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