Abstract
We investigated the influence of vacuum annealing on the interface properties of silicon carbide (SiC) metal–oxide–semiconductor (MOS) structures. For as-oxidized and nitric oxide (NO)-annealed samples, the interface state density (Dit) near the conduction band edge (EC) of SiC did not increase by subsequent vacuum annealing. For phosphoryl chloride (POCl3)-annealed samples, in contrast, Dit at EC − 0.2 eV increased from 1.3 × 1010 to 2.2 × 1012 cm−2 eV−1 by vacuum annealing, and the channel mobility of MOS field effect transistors (MOSFETs) decreased from 109 to 44 cm2 V−1 s−1. The mechanism of the observed increase in Dit was discussed based on the results of the secondary ion mass spectrometry measurement.
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