Abstract
The microstructures and the microwave dielectric properties of barium magnesium tantalate ceramics prepared by conventional mixed oxide route have been investigated. The prepared Ba(Mg 1/3Ta 2/3)O 3 exhibited a mixture of cubic perovskite and a hexagonal superstructure with Mg and Ta showing 1:2 order in the B-site. It is found that low level doping of V 2O 5 (up to 0.5 wt.%) can significantly improve densification of the specimens and their microwave dielectric properties. The density of doped Ba(Mg 1/3Ta 2/3)O 3 ceramics can be increased beyond 95% of its theoretical value by 1500 °C-sintering, which is caused by the liquid-phase effect of V 2O 5 addition. The detected second phase Ta 2O 5 was mainly the result of V 5+ substitution in the ceramics. Dielectric constant ( ε r) and temperature coefficient of resonant frequency ( τ f ) were not significantly affected, while the unloaded quality factors Q were effectively promoted by V 2O 5 addition due to the increase in B-site ordering. The ε r value of 24.1, Q× f value of 149,000 (at 10 GHz) and τ f value of 7.2 ppm/°C were obtained for Ba(Mg 1/3Ta 2/3)O 3 ceramics with 0.25 wt.% V 2O 5 addition sintered at 1500 °C for 3 h.
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