Abstract
In this paper, we study the photoelectric properties of pCdTe-nCdS and pCdTe-nCdSe-based film heterostructures. It is shown that the high value of the electron diffusion length in pCdTe slick (pellicle) is due to the presence of a built-in field in it. When studying the effect of temperature on the spectral characteristics, it was found that with increasing temperature, the maximum photosensitivity of the heterostructure shifts towards longer wavelengths of light. The shift in the photosensitivity maximum is explained by changes in the band gap of cadmium telluride. As shown, the accumulation coefficient increases with raising thickness of the wide-gap layer. It has been established that the short-wavelength edge of the photosensitivity of the pCdTe-nCdS structure begins to increase sharply at a photon energy of hv ≤ 2,3 eV, while the photosensitivity of the pCdTe-nCdSe structure already at a photon energy has a significant value ~ 100 μA/mV.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
