Abstract
A computer method is developed to generate diffusion impurity profiles for a V-band silicon n+npp+ double drift region (DDR) with different values of diffusion length (s) and surface concentration (NH). The microwave properties of DDRs having different diffusion profiles have been computed by iterative computer simulation programs developed for dc and high frequency analyses of the IMPATT diode. The results indicate that the performance of the DDR optimises for particular values of surface concentration and diffusion length, which in turn provides the optimal impurity diffusion profile and the optimal diffusion fabrication parameters (diffusion time and temperature) for the Si double drift IMPATT.
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