Abstract
The influence of thermal annealing and the incorporation of AlGaAs/GaAs superlattices on the structural and optical properties of GaAs-on-Si was studied in detail by transmission electron microscopy (TEM) and low-temperature photoluminescence (PL). TEM studies indicated that a drastic reduction in defect density and subsequent improvement in material quality occurred when these techniques were employed. This inference was confirmed by optical measurements where it was shown that the PL response from GaAs-on-Si epilayers was characterized by a significant narrowing of the exciton full-width at half-maximum and an increase in the intensity by several-fold when AlGaAs/GaAs superlattices were incorporated and when layers were subjected to thermal annealing.
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