Abstract
The possibility to modify nanostructure of silicon by applying of the weak (B-0.2T) constant magnetic field is proposed. It has been shown that structure and structure sensitive properties of Si undergo essential changes due to the action of a magnetic field. It has been found that relaxation of investigated experimental characteristics after magnetic treatment correlates with a relaxation of metastable states of nanoclusters, which commonly consist in structural defects and restoration of initial structure. Observed changes of physical characteristics are supposed to be connected with occurrence of structure relaxation processes.
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