Abstract
The effect of operational temperature on the electrophysical properties of polymer based electroluminescent structures is examined. For this purpose thin film of light-emitting semiconductor polyphenylenevinylene derivative is deposited between two indium-tin oxide (ITO) electrodes. DC current-voltage (I-V) characteristics of the fabricated devices ITO/polyphenylenevinylene derivative PPV-D/ITO are measured at varying ambient temperatures, ranging from room temperature (25°C) to 70°C. Several important electrical parameters like a trap factor, traps activation energy distribution, free carriers’ density, trapped carriers density, and effective mobility are estimated from measured temperature dependent I-V curves. Such analysis of the charge transport process in polymer devices may give information needed for optimization of the existing structures.
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