Abstract
II-VI buffer layers grown by molecular beam epitaxy (MBE) onto silicon exhibit a uniform, slightly faceted surface morphology. However, a number of surface defects are apparent and these are amplified by the subsequent growth of mercury cadmium telluride (MCT) by metal organic vapor phase epitaxy. Some of these defects have been traced to polishing damage present within the silicon substrate. A range of analytical techniques, including x-ray topography, have been used to track the defects from the substrate through to the buffer layer and into the MCT. Defects of this type will cause dead elements in the infrared focal plane arrays and will be a major cause of low operabilities.
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