Abstract
ABSTRACTThe growth of thin films of mercury-based materials by molecular beam epitaxy (MBE) presents significant experimental problems which must be overcome in order to successfully grow infrared detector materials such as mercury cadmium telluride (MCT). Many of the problems associated with the use of Hg in MBE arise from its high room temperature vapor pressure (2 mTorr) and its low sticking coefficient. The MBE system must be designed for Hg usage by considering such things as the ultra high vacuum pumping system, the Hg source, Hg containment, and Hg removal. In addition, Hg is a toxic heavy metal and must be handled appropriately. Other problems involved with the growth of MCT are associated with the design of the MBE furnaces which are used to evaporate cadmium telluride and tellurium.
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