Abstract
Using of ZnO semiconductor/BaTiO3 ferroelectric heterojunction for multifunctional devices requires the determination of valence band offset (VBO) at the heterointerface. VBO at ZnO/BaTiO3 interface was measured using in situ x-ray photoelectron spectroscopy and was calculated from energy difference between core levels (CLs) in the heterostructure and energy difference between CLs and valence band (VB) of pure materials. VBO is determined to be −0.70 ± 0.09 eV. A noticeable influence of polarization and heating of the sample through Curie temperature on change of VB energies referred to energies of CLs was not observed. The VBO is independent of the polarisation in ferroelectric.
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