Abstract
The results of comparative studies of electrical and galvanomagnetic properties of cadmium telluride films are reported. The films were synthesized under highly nonequilibrium conditions by the methods of a thermal screen and a quasi-closed volume. The temperature dependences of the conductivity, Hall coefficient, and effective Hall mobility are reported. As a result of experimental data, it is concluded that the method of a thermal screen favorably affects the stoichiometry of the composition and, thus, is conducive to obtaining films with a lower concentration of defects.
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