Abstract
X-ray and UV photovoltaic Schottky photodiodes based on single crystal diamond were recently developed at Rome “Tor Vergata” University laboratories. In this work, different rectifying metallic contact materials were thermally evaporated on the oxidized surface of intrinsic single crystal diamond grown by chemical vapor deposition. Their impact on the detection performance in the extreme UV and soft x-ray spectral regions was studied. The electrical characterization of the metal/diamond Schottky junctions was performed at room temperature by measuring the capacitance–voltage characteristics. The diamond photodiodes were then tested both over the extreme UV spectral region from 10 to 60 eV by using He-Ne DC gas discharge as a radiation source and toroidal vacuum monochromator, and in the soft x-ray range from 6 to 20 keV at the Diamond Light Source synchrotron x-ray beam-line in Harwell (UK). In both experimental setups, time response and spectral responsivity were analyzed for all the investigated Schottky contact materials. A good agreement between the experimental data and theoretical results from Monte Carlo simulations is found
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