Abstract
The effect of internal bias field on the field - induced movement of the domain walls in (CH 3 NH 3)5 Bi 2 Br 11 crystals has been investigated using liquid crystal decoration technique (NLC). The measurements were carried out in dc - electric field and alternate square pulses of electric fields. Comparison was made of the nucleation process in (CH 3 NH 3)5 Bi 2 Br 11 and TGS crystals. The difference was explained in terms of difference of activation energy for domain wall motion.
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