Abstract
Inhomogeneous strain relaxation in quantum wires etched from biaxially strained quantum wells is calculated. Characteristic features of the strain field are systematically discussed as a function of wire dimensions and illustrated with various semiconductor systems either under compressive or tensile strain. We provide a general relaxation curve. The shift of the band-gap energy in nanostructures due to the calculated strain field is then predicted and compared to data obtained from optical spectroscopy experiments.
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