Abstract
The pulsed laser deposition (PLD) technique is used to deposit Gallium doped zinc oxide (GZO) thin films on glass substrates at 250 with different Gallium (Ga) doping concentration of 0, 1.0, 3.0 and 5.0%. The influence of Ga doping concentration on structure, chemical atomic compositions, electrical and optical properties was investigated by XRD, XPS, Hall measurement and UV spectrophotometer, respectively. The relationship between electrical properties and Ga doping concentration was clarified by analyzing the chemical element compositions and the chemical states on the GZO films. It is found that the carrier concentrations and oxygen vacancies in the GZO films increase with increasing Ga doping concentration. The lowest resistivity (3.63 × 10 −4 Ω cm) and barrier height of grain boundaries (14 mV) were obtained with 3% Ga doping. In particular, we suppose the band gap of 5% Ga doping sample larger than that of 3% Ga doping sample is due to the quantum size effect from the amorphous structure rather than Moss–Burstein shift.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
