Abstract
Gallium doped zinc oxide (GZO) thin films were prepared by RF magnetron sputtering on glass substrates. The influence of substrate temperature ( T s) on structure, surface morphologies, chemical atomic compositions, electrical and optical properties was investigated by XRD, FE-SEM, XPS, Hall measurement and double-beam UV spectrophotometer, respectively. It is found that with increasing T s, film crystallinity is improved, stress in the GZO films is obviously relaxed and concentrations of Ga atoms and oxygen vacancies increase. The lowest resistivity (1.41×10 −3 Ω cm), and the highest figure of merit (1.94×10 −2 sq Ω −1) were obtained at 300 °C. The relationship between electrical properties and T s was clarified by analyzing the chemical element compositions and the chemical states on the surface of GZO films.
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