Abstract
In this paper, the influence of the epitaxial layer on the current-voltage characteristics, l D ( V D ), for high voltage VDMOS (vertical double-diffused MOS transistor devices) is analyzed. The quasi-saturation point of the l D ( V D ) curve and its evolution with the drain bias are studied. The epitaxial layer resistance is considered in the saturation and quasi-saturation operation modes.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
