Abstract
A critical effect in the field of the power semiconductors is their heating processes under high currents regime, in the order of amperes. The thermal characterization in working conditions is not always an easy task, and its over/underestimation can lead to failures in the design of the devices. Infrared thermography measurements are shown in this work as a valuable tool to determine the temperature mapping, profiles and heating and cooling rates of diodes under working conditions. Press-fit metal-oxide semiconductors commercial diodes with different designs from two different suppliers have been analyzed. This work provides elements that relate the dissipated power and the release of heat with the design.
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