Abstract
The suitability of the thermometry based on transmission Fabry–Pérot interferences in semiconductor devices and ICs under working conditions is experimentally shown. Usually, they work at short time scales producing internal temperature increments, which are crucial for understanding their failure mechanisms. Thanks to this technique, the temperature profile in semiconductor devices and ICs is extracted with a very good depth resolution (below 35 µm). By means of versatile apparatus, transmission Fabry–Pérot and internal infrared laser deflection temperature measurements are simultaneously performed on a specific thermal test chip device. Concretely, the temperature evolution at various depths of the thermal test chip during the device heating and cooling processes is obtained. Experimental results are compared with the analytical model which thermally describes the thermal test chip behaviour during the heating process, achieving a very good agreement.
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