Influence of the deposition temperature on the properties of copper thin films prepared by alternating injection of Cu(ethylketoiminate) 2 and H 2 on a ruthenium substrate

Abstract

The copper thin films were deposited by an alternating injection of Cu(ethylketoiminate) 2 and H 2, and the effects of substrate temperature on the atomic layer deposition and the properties of the deposited thin film were investigated. Continuous films with a small sheet resistance were obtained at a deposition temperature of 140 °C. The sheet resistance and the surface roughness increased with increasing deposition temperature due to the agglomeration of copper. The growth rate at 140 °C was 0.12 nm/cycle, with a copper precursor exposure greater than 1.0 × 10 7 L and H 2 exposure greater than 3.0 × 10 8 L.