Abstract
AbstractIridium and rhodium thin films have been formed by e-gun physical vapor deposition on thin-chromium-coated, thermally-oxidized, silicon substrates. Cr, Ir and Rh deposition rates and substrate temperature during deposition were measured and controlled. The effects of the latter deposition parameters on the sheet resistance and stress of the Ir and Rh films are presented and it is demonstrated that both stress and sheet resistance can be desirably minimized by proper choice of the process conditions. The resistivity of these Rh and Ir thin films has been measured at room temperature. Rh can be formed in a wider process window than Ir. Rh films with Rsh = 0.1 Ω/square have been obtained at a thickness of 0.6 ¼m.
Published Version
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