Abstract
The height of the potential barrier for the Ag-GaAsP has been measured experimentally. The dependence of the Schottky barrier height of the Ag-GaAsP structure on the composition of the solid solution is correlated with the dependence of the bandgap GaAsP on its composition. We calculate the equation describing the dependence of the height of the Ag-GaAsP Schottky barrier on the composition of GaAsP for indirect and direct-gap solid solutions.
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