Influence of the C+-Implantation Dose on the Wetting and Adhesion Properties of Silicon Surfaces

D G Wang,D K Zhang

doi:10.1007/978-3-642-03653-8_210

D G Wang, D K Zhang

https://doi.org/10.1007/978-3-642-03653-8_210

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Single crystal silicon wafers with the crystal orientation of (111) were implanted by carbon ion with the energy of 80 keV and doses of 2×1015 ions/cm2, 2×1016 ions/cm2 and 1×1017 ions/cm2. The crystal structures and chemical bondings of silicon surfaces after C+-implantation were analyzed by XRD and XPS, respectively. Distributions of radiation damages to the single crystal silicon substrate by different C+-implantation doses were calculated by TRIM program. The micro-morphologies of silicon surfaces before and after C+-implantation were observed and their surface roughnesses were demonstrated by means of MicroXAMTM high-accuracy 3D profiler. Contact angles of silicon surfaces before and after C+-implantation were measured using JY-82 contact angle goniometer to evaluate the influence of the C+-implantation dose on the wetting properties of silicon surfaces. Adhesive forces of silicon surfaces before and after C+-implantation were measured using AFM to study the change laws of adhesive forces with the C+-implantation doses. The results showed that the crystal structures changed and lots of C and some SiC were present at the silicon surfaces after C+-implantation. C+-implantation led to the radiation damage structure and lots of micro holes of the silicon surface. Their surface roughness and surface contact angles increased, the wetting properties got worse and surface energies were lower than those of the single crystal silicon. With the increase of the C+-implantation doses, surface damages got heavier, the surface roughness increased, the contact angle increased at first and then decreased, the wetting property changed from worse to better and the surface energy decreased firstly and then increased. The adhesive forces of silicon surfaces increased with the increase of the relative humidity. At the same humidity, the adhesive force of the silicon surface decreased at first and then increased with the increase of the C+-implantation dose.

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