Abstract
2–13 nm gold films were obtained by the method of ion-beam sputtering on silicon and quartz substrates. It is shown that the use of an additional operation of deposition followed by the sputtering of a gold layer of 2–3 nm thickness makes it possible to reduce the electrical resistance and surface roughness of the metal films, in comparison with similar films obtained without its use. The results of measuring the temperature coefficient of resistance of nanosized gold films on silicon substrates allowed us to conclude that the films deposited become continuous at a thickness of 6-8 nm. The results of optical measurements of 10 nm gold films, obtained on quartz substrates, showed that the reflection coefficient of electromagnetic radiation at a wavelength of 850 nm is 2.8 % higher than the corresponding coefficient for the same films obtained without using this operation, and is 83 %. An important role in the formation of nanoscale gold layers is played by the processes of self-irradiation of the growing layer of the high-energy component of the gold atoms flux. When using an additional operation of deposition/sputtering, high-energy gold atoms are implanted into the substrate to a depth of about 2 nm. On the one hand, these atoms are point defects in the surface damaged layer of the substrate; on the other hand, they serve as additional centers of cluster formation. This ensures strong adhesion of the metal layer to the substrate and, therefore, the gold films become continuous and more homogeneous in microstructure. The method of ion-beam deposition can be successfully applied to obtain high-quality conductive optically transparent nanosized gold films.
Highlights
2–13 nm gold films were obtained by the method of ion-beam sputtering on silicon and quartz substrates
It is shown that the use of an additional operation of deposition followed by the sputtering of a gold layer of 2–3 nm thickness makes it possible to reduce the electrical resistance and surface roughness of the metal films, in comparison with similar films
The results of measuring the temperature coefficient of resistance of nanosized gold films on silicon substrates allowed us to conclude that the films deposited become continuous at a thickness of 6-8 nm
Summary
Причем анализ соотношений между оптическими коэффициентами на длине волны 850 нм для слоев золота, полученных с применением дополнительной операции напыления/распыления (R = 83,0 %, T = 4,6 %, A = 12,4 %) и без его применения (R = 80,7 %, T = 6,8 %, A = 12,5 %), позволяет заключить, что отражение увеличивается в основном за счет уменьшения пропускания, а не поглощения волн. Анализ оптических характеристик на длине волны 308 нм (образец, полученный с применением вышеуказанной операции, имеет значения соответствующих коэффициентов R = 29,8 %, T = 8,2 %, A = 62,0 %, а без ее применения – R = 28,7 %, T = 10,4 %, A = 60,9 %) показал, что в данной области длин волн отражение незначительно увеличивается за счет ослабления пропускания при относительно небольшом возрастании поглощения – максимальная доля энергии налетающей частицы, передаваемая первоначально покоящемуся атому мишени в одном столкновении; M1 и M2 – соответственно массы налетающего и покоящегося атомов
Sign-in/Register to view highlights & summary 
Published Version (
Free)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call