Abstract
Top-pinning, spin-valve multilayer films with the structure Ta (5 nm)/Co75Fe25 (5 nm)/Cu (2.5 nm)/Co75Fe25 (5 nm)/Ir20Mn80 (12 nm)/Ta (8 nm) were prepared by high-vacuum DC magnetron sputtering. The effects of temperature on the film microstructure and magnetic properties were investigated by X-ray diffraction, atomic force microscopy, transmission electron microscopy, and vibrating sample magnetometry. The effects of temperature on the thermomagnetic stability of the spin-valve multilayers were studied based on the residence time of the sample in a reverse saturation field. The following effects were observed with increasing temperature: the IrMn(111) texture weakened; surface/interface roughness increased; interfacial diffusion was enhanced; the coercivities of the exchange bias field and pinned layer decreased; the coercivity of the free layer increased; relaxation became more obvious; and thermomagnetic stability decreased.
Highlights
In the late 1980s, German scientist Grünberg1 and French scientist Fert2 respectively found giant magnetoresistance (GMR) in an Fe/Cr/Fe sandwich structure and an (Fe/Cr)n multilayer film
The degree of (111) texture decreased with increasing temperature [Figs. 1(b) and 1(c)]
To further study the effect of temperature on the multilayer film structure, we evaluated the surface/interface morphology using atomic force microscopy (AFM)
Summary
In the late 1980s, German scientist Grünberg and French scientist Fert respectively found giant magnetoresistance (GMR) in an Fe/Cr/Fe sandwich structure and an (Fe/Cr)n multilayer film. As a result of the reluctance effect, multilayer films have wide application prospects in high-density readout heads and magnetic storage elements. GMR multilayer films have attracted considerable attention worldwide, especially in applications of the GMR effect to magnetic information storage devices (e.g., hard disks).. During the use of magneto-electronic devices, the current effect causes the device temperature to increase, with some devices reaching approximately 100○C.21 Under these temperature conditions, interlayer diffusion may destroy the ferromagnetic/antiferromagnetic interlayer coupling, thereby affecting the exchange bias and the reliability of the magnetoelectronic device. It is important to study the effects of temperature on the structure and magnetic properties of spin-valve multilayer films. The effects of temperature on the structure and magnetic properties of CoFe/Cu/CoFe/IrMn spin-valve multilayer films were. Based on the results, the theoretical basis for the practical application of the multilayer film was considered
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