Influence of Temperature on the Pressure Distribution Within Press Pack IGBTs

Abstract

Press pack (PP) packaging technology has been applied to insulated-gate bipolar transistors (IGBTs) for high-voltage and high power density applications in recent years. The pressure distribution within PP IGBTs is very important because it affects both the electrical and thermal contact resistances, thermal cycling capability, and short-circuit current rating. Too much pressure will mechanically damage the chip and too little pressure will increase the thermal contact resistance, which eventually leads to chip thermal damage. In this paper, a finite-element multiphysics model cocoupled with an electrical field, thermal field, and mechanical field is proposed to analyze the collector current distribution, pressure distribution, and junction temperature distribution within PP IGBTs. The most important coupling variables, such as electrical and thermal contact resistances, for this cocoupled multiphysics model are calculated or measured by experiment through a single IGBT/fast-recovery diode chip submodule. Based on this multiphysics model, the influence of the high temperature generated by the chip's power dissipation on the pressure distribution within PP IGBTs (in the heating phase) is discussed, and then, compared with the pressure distribution in the clamping phase. The results show that the pressure distribution within PP IGBTs in the heating phase is extremely uneven and different from the value in the clamping phase. Furthermore, the mechanical model and its boundary conditions are verified through the pressure distribution experimental results in the clamping phase, which is measured based on the Fuji prescale film and the clamping test bench. Based on the simulation and experimental results, an optimization of the collector electrode and pedestal is proposed to improve the pressure distribution within PP IGBTs in the heating phase.