Abstract
The high power light emitting diode (LED) based on AlGaInP is tested on line at temperatures from 350 to 77 K. The experimental data are fitted to measure the relationship between temperature and the ideality factor, the forward voltage, the relative light intensity emitted by the LED, the carrier lifetime and the reverse recovery time of the device. These results show that temperature has a significant influence on different properties of such LED. Finally, it is important to note that an optimization among the different parameter values, while some increasing and others decreasing with temperature change, as indicated in the present study, is essential and must be considered for design involving the device, particularly, for any low temperature application.
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