Abstract
In this manuscript, the influence of temperature and frequency on dielectric and alternative current conductivity, σac, properties of gold deposited on PM-355 thin films was studied. The effects of annealing and nitrogen ion beam irradiation on the dielectric and ac electrical conductivity properties of the formed thin films were determined. After cleaning of the formed thin films by two organic solvents as ethanol and chloroform, the real and imaginary parts of the dielectric constants such as dielectric constant, e', and dielectric loss, e'', were measured at different temperatures and frequencies using LCR meter. Experimental results showed that e', e'' and σac were strongly depend on the temperature and frequency. It was found that the thin film which is cleaned by ethanol gave lower e' value than cleaned by chloroform and the thin film treated by annealing gave e' value between them, while the thin film irradiated by nitrogen ion beam gave the highest e' value. Also, the ac conductivity of thin film irradiated by nitrogen ion beam gave the highest value than treated by annealing and cleaned by chloroform.
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