Abstract
Titanium nitride films which are deposited on a Si wafer by titanium evaporation and simultaneous nitrogen ion-beam irradiation have preferred orientations, which depend on Ti atom/N ion arrival ratio. The effects of nitrogen pressure and ion beam irradiation are discussed to clarify the mechanism of the variation of crystallization. Nitridation with adsorbed nitrogen leads to 〈111〉-oriented TiN crystal growth. Ion bombardment induces 〈100〉-oriented TiN crystal growth. This effect is covered by the nitridation with adsorbed nitrogen, for higher nitrogen pressure case. The difference in the growth rates of 〈111〉-oriented crystals and that of 〈100〉-oriented crystals leads to the variation of prefferred orientations, and so the control of the orientation of crystal growth is available.
Published Version
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