Abstract
Copper represents the most commonly used interconnect material in ultra large-scale integration (ULSI) technology. Given that the successful implementation of Cu requires the use of underlying diffusion barriers, these studies were focused on the influence of Ta-based barrier layers on the microstructure of physical vapor deposited (PVD) and electrochemically deposited (ECD) Cu thin films. The variation of a-Ta, b-Ta, TaSiN, and TaN as an underlayer caused a modification of the PVD Cu seed-layer texture, which also affected the microstructure of Cu electroplated on top of the seed layer, both before and after recrystallization at room temperature.
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