Abstract
A detailed analysis of the M-I-pSi solar cell has been made considering all the components of the hole and electronic currents. The tunnelling current due to the surface states has been evaluated by taking a realistic distribution of surface states (using the reported experimental data) and their occupational probability, thus the calculations of the open circuit voltage Voc and the short-circuit current density Jsc have been made for different positions of the impurity level (surface states) in the band gap. The location of the surface states has a significant effect on Voc and Jsc. For surface states in the range of -0.15 eV to 0.15 eV no change of Voc or Jsc is observed, but they decrease for surface states located at the two band edges. The theoretical results show a good agreement with the reported experimental results for Voc and Jsc as a function of oxide thickness for realistic values of the various semiconductor parameters.
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