Abstract
Growth mechanisms controlling the shape of InAs quantum dots grown by solid source MBE on InP(001) are studied. InAs surface reconstructions play an important role to get more isotropic quantum dots rather than elongated quantum dashes. Dash to dot shape transition is also demonstrated with postgrowth treatments that change InAs surface reconstructions. Properties of such single InAs/InP quantum dots on low density samples are finally evaluated with microphotoluminescence and cathodoluminescence studies.
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