Abstract
Self-organized InAs quantum dots were grown by molecular-beam epitaxy on the GaAs (1̄1̄3̄) B surface. Atomically-resolved scanning tunneling microscopy images were acquired in situ. Each quantum dot grows with the same orientation relative to the substrate, with mirror symmetry to the (1̄10) plane perpendicular to the surface, and with its central part sitting on a flat base. The shape of the central part is given by {110} and (1̄1̄1̄) B bounding facets and a not-further-resolved round region. High-index surfaces such as (1̄3̄5̄) B, (3̄1̄5̄) B, and probably (1̄1̄2̄) B are derived for the base.
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