Abstract
Ferroelectrics Pb(Zr 0.53 Ti 0.47 )O 3 (PZT) thin films were grown on a highly oriented (111)Pt/Ti/SiO 2 /Si substrates using the pulsed laser ablation. The ac impedance measurement of PZT thin films have been performed between 10 m 2 Hz and 10 6 Hz in the bias fields range from m 5 V to 5 V. In low frequency, rapid increasing of l ' and the field dependence of impedance dispersion were observed under the bias voltage of m 5V and m 3V, which was interpreted by the diffusion based on blocked charge. We can explain that the blocking interface gives rise to constant phase element (CPE) response and the CPE model of impedance function is well described to fit data.
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