Abstract
In this study, we fabricated hexagonal YFeO3 films on Si(100) and Si(111) substrates by a sol-gel method, and investigated the effect of substrate orientation on the structural, ferroelectric and piezoelectric properties of the YFeO3 films. Grazing incidence X-ray diffraction reveals that the YFeO3 films on Si(100) and Si(111) have slight preferred-orientation in (110) and (004) direction, respectively. Both films possess granular microstructure with good crystallization, as well as low surface roughness. The (004)-oriented film has higher density than the (110)-oriented film, resulting in lower leakage current. The two films show weak ferroelectric properties and different domain structures. Local amplitude and phase response loops manifest that the film on Si(111) possesses larger phase change and coercive field. While influenced by polarization rotation towards the applied field direction, larger effective piezoelectric coefficient d33 of 67 pm/V has been found in the film on Si(100). These findings suggest that preferred orientation can account for the physical properties of multiferroic YFeO3 films.
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