Abstract
A series of InGaAs/GaAs Single Strained Quantum Wells (SSQWs) with indium content ranging from 25% to 35% and 100Å well thickness were grown on two different (111)B GaAs off-axis substrates under optimized growth conditions for simultaneous growth. Optoelectronic properties were studied in terms of low temperature photoluminescence (PL). Results indicate a PL emission dependence with the substrate used, this dependence being stronger for highly strained systems. In order to determine the source of this dependence, samples were studied by Planar View Transmission Electron Microscopy (PVTEM). Relaxation mechanisms seem to act in a different way regarding the misoriented substrate used. Although previous theoretical results have already reported this dependence, this is the first direct evidence of this phenomenon for SSQWs. The results of these two different techniques will be compared and discussed.
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